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FAIRCHILD SEMICONDUCTOR  FDC645N  MOSFET Transistor, N Channel, 5.5 A, 30 V, 0.023 ohm, 10 V, 1.4 V

FAIRCHILD SEMICONDUCTOR FDC645N
Technical Data Sheet (148.48KB) EN Ver todos os documentos técnicos

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Descrição geral do produto

The FDC645N is a 30V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild's the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
  • Low gate charge
  • High performance trench technology for extremely low RDS (on)
  • High power and current handling capability

Informação do produto

Transistor Polarity:
N Channel
Continuous Drain Current Id:
5.5A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.023ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.4V
Power Dissipation Pd:
1.6W
Transistor Case Style:
SuperSOT
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Aplicações

  • Power Management;
  • Industrial

Legislação e Ambiente

Nível de sensibilidade à umidade:
MSL 1 - Unlimited
País de origem:
United States

País onde se realizou a maior parte do processo de produção

Conformidade RoHS:
Sim
Tarifa N.º:
85412900
Peso (kg):
.000052

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