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HGTG30N60A4D - 

IGBT Single Transistor, General Purpose, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 Pins

FAIRCHILD SEMICONDUCTOR HGTG30N60A4D

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Nº da peça do fabricante:
HGTG30N60A4D
Código Farnell
9846611
Ficha técnica:
(EN)
Ver todos os documentos técnicos

Informação do produto

:
463W
:
75A
:
600V
:
150°C
:
3Pins
:
2.6V
:
-
:
-
:
TO-247
:
-
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Descrição geral do produto

The HGTG30N60A4D is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
  • 60ns at TJ = 125°C Fall time

Aplicações

Motor Drive & Control, Power Management, Industrial

Avisos

ESD sensitive device, take proper precaution while handling the device.

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