BFP640H6327XTSA1
Bipolar - RF Transistor, NPN, 4.5 V, 40 GHz, 200 mW, 50 mA, SOT-343
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| Quantity | Price (ex VAT) |
|---|---|
| 5+ | €0.382 |
| 50+ | €0.242 |
| 100+ | €0.209 |
| 500+ | €0.184 |
| 1500+ | €0.177 |
Product Information
Product Overview
The BFP 640 H6327 is a NPN low-noise Bipolar RF Transistor based on Infineon's reliable high volume silicon germanium carbon hetero-junction bipolar technology. With its high linearity at currents as low as 10mA this device supports energy efficient designs. The typical transition frequency is approximately 40GHz, hence the device offers high power gain at frequencies up to 8GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads.
- Linear low-noise wide band transistor
- High linearity
- High transition frequency
- Low power consumption
- Easy to use
- Halogen-free
Applications
Industrial, RF Communications, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
NPN
40GHz
50mA
4Pins
Surface Mount
-
MSL 1 - Unlimited
4.5V
200mW
SOT-343
110hFE
150°C
AEC-Q101
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate