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IXFN27N80Q
MOSFET Transistor, N Channel, 27 A, 800 V, 0.32 ohm, 10 V, 4.5 V
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No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN27N80Q
Order Code4905593
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id27A
Drain Source Voltage Vds800V
Drain Source On State Resistance0.32ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation520W
Operating Temperature Max150°C
Product Range-
Product Overview
The IXFN27N80Q is a Q-class HiPerFET™ N-channel enhancement-mode Single Die Power MOSFET features avalanche rated and fast intrinsic rectifier.
- International standard package
- miniBLOC with aluminium nitride isolation
- UL94V-0 Flammability rating
- Unclamped inductive switching (UIS) rated
- Rugged polysilicon gate cell structure
- Low package inductance
- Easy to mount
- Space savings
- High power density
- High dV/dt and low trr
Applications
Power Management, Industrial, Motor Drive & Control
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
800V
Rds(on) Test Voltage
10V
Power Dissipation
520W
Product Range
-
Continuous Drain Current Id
27A
Drain Source On State Resistance
0.32ohm
Gate Source Threshold Voltage Max
4.5V
Operating Temperature Max
150°C
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.04
Product traceability