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55GN01CA-TB-E
Bipolar - RF Transistor, NPN, 10 V, 5.5 GHz, 200 mW, 70 mA, TO-236AB (SOT-23)
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 20 week(s)
| Quantity | Price (ex VAT) |
|---|---|
| 9000+ | €0.0642 |
Price for:Each (Supplied on Full Reel)
Minimum: 9000
Multiple: 9000
€577.80 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part No55GN01CA-TB-E
Order Code3616984
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max10V
Transition Frequency5.5GHz
Power Dissipation200mW
Continuous Collector Current70mA
Transistor Case StyleTO-236AB (SOT-23)
No. of Pins3Pins
DC Current Gain hFE Min100hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Transistor Polarity
NPN
Transition Frequency
5.5GHz
Continuous Collector Current
70mA
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
10V
Power Dissipation
200mW
Transistor Case Style
TO-236AB (SOT-23)
DC Current Gain hFE Min
100hFE
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1
Product traceability