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RS1E280BNTB
Power MOSFET, N Channel, 30 V, 80 A, 2300 µohm, HSOP, Surface Mount
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2,500 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 500+ | €0.514 |
| 1000+ | €0.496 |
| 5000+ | €0.479 |
Price for:Each (Supplied on Cut Tape)
Minimum: 500
Multiple: 1
€262.00 (ex VAT)
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Product Information
ManufacturerROHM
Manufacturer Part NoRS1E280BNTB
Order Code4203062RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id80A
Drain Source On State Resistance2300µohm
Transistor Case StyleHSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation30W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
HSOP
Rds(on) Test Voltage
10V
Power Dissipation
30W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
2300µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
-
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001