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BLF578
RF FET Transistor, 110 V, 88 A, 225 MHz, SOT-539A
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerNXP
Manufacturer Part NoBLF578
Order Code1851687
Technical Datasheet
Drain Source Voltage Vds110V
Continuous Drain Current Id88A
Power Dissipation-
Operating Frequency Min-
Operating Frequency Max225MHz
Transistor Case StyleSOT-539A
No. of Pins4Pins
Operating Temperature Max225°C
Channel TypeN Channel
Transistor MountingFlange
Product Range-
Product Overview
The BLF578 is a 1200W LDMOS Power Transistor for broadcast and industrial applications in the HF to 500MHz band.
- Easy Power Control
- ESD Protection Upto 1.5kV
- Excellent Ruggedness
- High Efficiency
- Excellent Thermal Stability
Applications
Industrial, Medical, Signal Processing, Communications & Networking
Technical Specifications
Drain Source Voltage Vds
110V
Power Dissipation
-
Operating Frequency Max
225MHz
No. of Pins
4Pins
Channel Type
N Channel
Product Range
-
Continuous Drain Current Id
88A
Operating Frequency Min
-
Transistor Case Style
SOT-539A
Operating Temperature Max
225°C
Transistor Mounting
Flange
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.021339