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Quantidade | |
---|---|
1+ | 8,350 € |
10+ | 7,210 € |
25+ | 7,030 € |
100+ | 6,860 € |
250+ | 6,680 € |
500+ | 5,520 € |
Informação do produto
Descrição geral do produto
HMC849ALP4CE is a high isolation non-reflective DC to 6GHz GaAs pHEMT SPDT switch in a low cost leadless surface mount package. The switch is ideal for cellular/WiMAX/4G Infrastructure applications yielding up to 60dB isolation, low 0.8dB insertion loss and +52dBm input IP3. Power handling is excellent up through the 5 - 6GHz WiMAX band with the switch offering a P1dB compression point of +31dBm. On-chip circuitry allows a single positive voltage control of 0/+3V or 0/+5V at very low DC currents. An enable input (EN) set to logic high will put the switch in an all off state. Application includes cellular/4G infrastructure, WiMAX, WiBro and fixed wireless, automotive telematics, mobile radio and test equipment.
- Typical insertion loss is 0.9dB (DC - 2.0GHz, TA=+25°C, Vctl=0/Vdd)
- Typical isolation (RFC to RF1/RF2) is 48dB (2.0 - 4.0GHz, TA=+25°C, Vctl=0/Vdd)
- Return loss (on state) is 17dB (DC - 4.0GHz, TA=+25°C, Vctl=0/Vdd)
- Input power for 1dB compression is 24dBm (+3, 0.35 - 6.0GHz, TA=+25°C, Vctl=0/Vdd)
- Typical switching speed is 60ns (tRISE, tFALL (10/90% RF), DC - 6.0GHz, TA=+25°C, Vctl=0/Vdd)
- Operating temperature range from -40 to +85°C
- HMC849A low stress injection moulded plastic
Notas
ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party
Especificações Técnicas
0Hz
QFN-EP
3V
-40°C
-
MSL 3 - 168 hours
6GHz
16Pins
5V
85°C
-
No SVHC (21-Jan-2025)
Documentação técnica (1)
Legislação e Ambiente
País onde se realizou a maior parte do processo de produçãoPaís de origem:Philippines
País onde se realizou a maior parte do processo de produção
RoHS
RoHS
Certificado de conformidade de produto