CY7C1021DV33-10BVXIT
SRAM, 1 Mbit, 64K x 16bit, 3 V to 3.6 V, VFBGA-48
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| Quantidade | |
|---|---|
| 1+ | 6,150 € |
| 10+ | 5,380 € |
| 25+ | 4,460 € |
| 50+ | 4,000 € |
| 100+ | 3,690 € |
| 250+ | 3,440 € |
| 500+ | 3,260 € |
Informação do produto
Descrição geral do produto
CY7C1021DV33-10BVXIT is a CY7C1021DV33 high-performance CMOS static RAM organized as 65536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Writing to the device is accomplished by taking chip enable active-low (CE) and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A15). If byte high enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A15).
- Pin-and function-compatible with CY7C1021CV33
- High speed is tAA = 10ns
- Low active power ICC = 60 mA at 10ns
- Low active power ICC = 60mA at 10ns
- 2.0V data retention
- Automatic power-down when deselected
- CMOS for optimum speed/power, independent control of upper and lower bits
- 48-ball VFBGA package
- Industrial ambient temperature range from –40°C to +85°C
Especificações Técnicas
1Mbit
64K x 16bit
3V to 3.6V
VFBGA
48Pins
10ns
3.3V
Surface Mount
85°C
-
Asynchronous SRAM
1Mbit
64K x 16bit
VFBGA
3V
3.6V
-
-40°C
-
No SVHC (21-Jan-2025)
Documentação técnica (2)
Legislação e Ambiente
País onde se realizou a maior parte do processo de produçãoPaís de origem:Philippines
País onde se realizou a maior parte do processo de produção
RoHS
RoHS
Certificado de conformidade de produto