STPSC20H12DY
Silicon Carbide Schottky Diode, Single, 1.2 kV, 38 A, 129 nC, TO-220AC
Precisa de mais?
| Quantidade | |
|---|---|
| 1+ | 10,340 € |
| 5+ | 8,270 € |
| 10+ | 6,190 € |
| 50+ | 5,690 € |
| 100+ | 5,360 € |
| 250+ | 5,250 € |
Informação do produto
Descrição geral do produto
The Schottky Silicon-Carbide Diodes from STMicroelectronics take advantage of SiC's impressive performance over standard Silicon. Offering double or triple the bandgap in comparison to silicon means that SIC devices can tolerate much higher voltages and electric fields. The low reverse recovery characteristics increase efficiency in all systems thanks to their low forward voltage and make ST's silicon-carbide diodes a key contributor to energy savings. These savings are found in SMPS applications as well as solar energy conversion, EV or HEV charging stations, and many more. The product ranges from 600V to 1200Vin through hole and SMD packages.
Avisos
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Especificações Técnicas
-
1.2kV
129nC
2 Pin
Through Hole
No SVHC (12-Jan-2017)
Single
38A
TO-220AC
175°C
AEC-Q101
Documentação técnica (3)
Legislação e Ambiente
País onde se realizou a maior parte do processo de produçãoPaís de origem:China
País onde se realizou a maior parte do processo de produção
RoHS
RoHS
Certificado de conformidade de produto