MMZ09332BT1
High Efficiency/Linearity Amplifier, 130 MHz to 1 GHz, 30.5 dB Gain, 3 V to 5 V, HVQFN-12, 175 °C
Precisa de mais?
| Quantidade | |
|---|---|
| 1+ | 7,530 € |
| 10+ | 6,530 € |
| 25+ | 6,190 € |
| 50+ | 5,880 € |
| 100+ | 5,420 € |
| 250+ | 5,150 € |
| 500+ | 4,960 € |
Informação do produto
Descrição geral do produto
MMZ09332BT1 is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, smart grid, W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W-CDMA air interfaces with an ACPR of -50 dBc at an output power of up to 23dBm covering frequencies from 130 to 1000MHz. It operates from a supply voltage of 3 to 5V. The amplifier requires minimal external matching and offers state of the art reliability, ruggedness, temperature stability and ESD performance.
- Frequency range from 130 to 1000MHz
- P1dB is 33dBm, 450 to 1000MHz and OIP3 is up to 48dBm at 900MHz
- Excellent linearity
- Active bias control (adjustable externally)
- Single 3 to 5V supply
- Single ended power detector
- 1200mA total supply current
- 29dBm RF input power
- 12 lead HVQFN package
- 175°C junction temperature
Avisos
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Especificações Técnicas
130MHz
30.5dB
HVQFN
3V
-
-
MSL 1 - Unlimited
1GHz
-
12Pins
5V
175°C
-
No SVHC (27-Jun-2024)
Documentação técnica (2)
Legislação e Ambiente
País onde se realizou a maior parte do processo de produçãoPaís de origem:China
País onde se realizou a maior parte do processo de produção
RoHS
RoHS
Certificado de conformidade de produto