Precisa de mais?
Quantidade | |
---|---|
1+ | 1,250 € |
10+ | 1,210 € |
25+ | 1,180 € |
50+ | 1,140 € |
100+ | 1,110 € |
250+ | 1,070 € |
500+ | 1,040 € |
1000+ | 1,000 € |
Informação do produto
Descrição geral do produto
The L6387ED is a simple and compact high voltage Gate Driver manufactured with the BCD™ offline technology and able to drive a half-bridge of power MOS or IGBT device. The high-side (floating) section is enabled to work with voltage rail up to 600V. Both device outputs can independently sink and source 650 and 400mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function. The L6387E device provides two input pins and two output pins and guarantees the outputs toggle in phase with inputs. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices. The L6387E features the UVLO protection on the VCC supply voltage and integrates the bootstrap diode, allowing a more compact and reliable solution.
- CMOS/TTL Schmitt-trigger inputs with hysteresis and pull-down
- Internal bootstrap diode structure
- Outputs in phase with inputs
- Interlocking function
- dV/dt immunity of ±50V/ns in full temperature range
- 50/30ns Rise/fall with 1nF load switching time
Aplicações
Consumer Electronics, HVAC, Motor Drive & Control, Industrial, Lighting, Building Automation, Power Management
Avisos
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Especificações Técnicas
2Channels
High Side and Low Side
8Pins
Surface Mount
400mA
5.5V
-45°C
110ns
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No SVHC (21-Jan-2025)
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IGBT, MOSFET
SOIC
Inverting
650mA
17V
125°C
105ns
-
Documentação técnica (3)
Produtos associados
1 produto encontrado
Legislação e Ambiente
País onde se realizou a maior parte do processo de produçãoPaís de origem:Malaysia
País onde se realizou a maior parte do processo de produção
RoHS
RoHS
Certificado de conformidade de produto