NTMFS10N7D2C

NTMFS10N7D2C is a power trench, N‐channel, shielded gate MOSFET. This N-channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. Application includes primary DC−DC MOSFET, synchronous rectifier in DC−DC and AC−DC, motor drive and solar.

• Lowers switching noise/EMI
• 100% UIL tested
• Drain to source voltage is 100V (TA = 25°C)
• 50% lower Qrr than other MOSFET suppliers
• Gate to source voltage is ±20V (TA = 25°C)
• Drain current is 78A (continuous, TC = 25°C)
• Single pulse avalanche energy is 216mJ (TC = 25°C)
• Power dissipation is 83W (TC = 25°C)
• Turn-on delay time is 13ns (typ, VDD = 50V, ID = 28A, VGS = 10V, RGEN = 6ohm,TJ = 25°C)
• PQFN8 package, operating and storage junction temperature range from -55 to +150°C

Avisos

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.